Ulrich Gösele

Director and Scientific Member at the

Max Planck Institute of Microstructure Physics

Weinberg 2 
06120 Halle 
GERMANY 
 

Curriculum Vitae

• Born in Stuttgart, Germany (Jan. 25th, 1949)
• Study of Physics in Stuttgart and Berlin
• PhD at the MPI für Metallforschung and University of Stuttgart (1975)
• Visiting Scientist, Atomic Energy Board, Pretoria (1976/77)
• Visiting Scientist, IBM Watson Research Center , New York, (1980/81)
• Habilitation Univ. Stuttgart (1983)
• Research Engineer, Siemens Corp., Research Labs. Munich (1984/85)
• Full Professor of Materials Science, Duke Univ., Durham, N.C., USA (1985-)
  (since 1994: J.B. Duke Professor of Materials Science)
• Visiting Scientist, NTT LSI Laboratories, Atsugi, Japan (1991)
• Director and Scientific Member, Max-Planck-Insitute of Microstructure Physics (since 1993)
• Adjunct Professor, Martin-Luther-University Halle-Wittenberg , (1994-)
• Adjunct Professor, Duke University, Durham, N.C., USA, (1998-)
• Visiting Scientist, Harvard University, Cambridge, MA, USA, (Fall 2003)

Research Interests:

• Science and technology of wafer bonding
• Diffusion and defects in semiconductors
• Semiconductor nanoparticles and nanowires
• Complex oxide films on semiconductors
• Silicon photonics / Photonic crystals
• Self-organized nanoscale structures

Publications:

Out of more than 400 publications in refereed journals, which have been cited collectively more than 10,000 times, leading to an h-factor of 55 (April 2007), a selection of 10 publications, published after 1990 is given:

Wang, Y., V. Schmidt, S. Senz, S., and U. Gösele.
Epitaxial growth of silicon nanowires using an aluminium catalyst.
Nature Nanotechnology 1, 186-189 (2006).

Lee, W., R. Ji, U. Gösele and K. Nielsch.
Fast fabrication of long-range ordered porous alumina membranes by hard anodization.
Nature Materials 5, 741-747 (2006).

Fan, H. J., M. Knez, R. Scholz, K. Nielsch, E. Pippel, D. Hesse, M. Zacharias, and U. Gösele.
Monocrystalline spinel nanotube fabrication based on the Kirkendall effect.
Nature Materials 5, 627-631 (2006).

Chu, M.-W., I. Szafraniak, R. Scholz, C. Harnagea, D. Hesse, M. Alexe, and U. Gösele.
Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites.
Nature Materials 3, 87-90 (2004).

Steinhart, M., J. H. Wendorff, A. Greiner, R. B. Wehrspohn, K. Nielsch, J. Schilling, J. Choi, and U. Gösele.
Polymer nanotubes by wetting of ordered porous templates.
Science 296, 1997 (2002).

Lee, H. N., D. Hesse, N. D. Zakharov, and U. Gösele.
Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ films of uniform a-axis orientation on silicon substrates.
Science 296, 2006-2009 (2002).

Zakharov, N. D., P. Werner, U. Gösele, G. Gerth, G. E. Cirlin, V. A. Egorov, and B. V. Volovik.
Structure and optical properties of Ge/Si superlattice grown on Si substrates by MBE at different temperatures.
Materials Science & Engineering B 87, 92-95 (2001).

Nielsch, K., F. Müller, A. P. Li, and U. Gösele.
Uniform nickel deposition into ordered alumina pores by pulsed electrodeposition.
Advanced Materials 12, 582-586 (2000).

Kirstaedter, N., N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, U. Richter, P. Werner, U. Gösele, and J. Heydenreich.
Low threshold, large T₀ injection laser emission from (InGa)As quantum dots.
Electronics Letters 30, 1416-1417 (1994).

Lehmann, V. and U. Gösele.
Porous silicon formation: A quantum wire effect.
Applied Physics Letters 58, 656-658 (1991).

Scientific Awards/Memberships

• 1999 Electronics Division Award of the Electrochemical Society
• K. u. K. Böhmisch Physikalische Gesellschaft
• Deutsche Physikalische Gesellschaft
• American Physical Society, Fellow
• Institute of Physics, Fellow
• Electrochemical Society
• Friends of the Weizmann-Institute
• Deutsche Akademie der Naturforscher Leopoldina
• Board of Directors, Materials Research Society (2002-2005)
• Information Science Award (2005)
• Honorary Professor, Chinese Academy of Sciences
  

Books

Semiconductor Wafer Bonding Science and Technology Wiley, 1999 ISBN: 0-471-57481-3     Q.-Y. Tong U. Gösele

Wafer Bonding Applications and Technology Springer, 2004 ISBN: 3-540-21049-0     M. Alexe U. Gösele (Eds.)

Patents (selection)

US Patent No. 4,883,215 and 4,962,876
Bubble-free bonding of silicon wafers

US Patent No. 5,024,723
Method of producing a thin silicon on insulator layer by wafer bonding and chemical thinning

US Patent No. 5,206,523
Microporous crystalline silicon of increased band-gap for semiconductor applications

US Patent No. 5,877,070
Method for the transfer of thin layers of monocrystalline material to a desirable substrate

Art & Design

• designed by Michael Goesele