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Marin Alexe
Max Planck Institute of Microstructure Physics tel: +49-345-5582-705 |
My name in Japanese |
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I am originally from
Thin film growth and characterization: metal oxide ferroelectric thin film deposition, optical and high-frequency applications; pulsed laser deposition, and chemical solution deposition; oxide thin film heterostructures; growth mechanisms and defect structures; structure-property-processing interrelationships; integration of Si and GaAs for device applications.
Nano-fabrication technologies; novel physical phenomena in electronic, and photonic materials with shrinking dimensions. Size effects in nanoscale ferroelectric materials. Physics and micro- and nano-engineering of thin film devices (dielectric or magnetic multi-layers, multi-functional thin film devices, sensors, micro-actuators, non-volatile memories, DRAMs)
Non-volatile information storage technologies: ferroelectric random access memories; integrated optical devices for information processing and storage; "smart" thin film for sensors and actuators, and technology development and marketing. Physics and technology of MOS devices including MFS devices and non-volatile memories. Interfaces (oxides-semiconductor) and interface properties
Book on
Nanoscale Characterization of Ferroelectric Materials
Lectures on “Nanoscale
Functional Materials”
International Joint Conference on the
Application of Ferroelectrics 2002, May 28-June 1,
Tutorial on "Ferroelectric
Materials and Nanoscale Ferroelectrics"
International Symposium on Integrated
Ferroelectrics, ISIF-2005, April 17,
Tutorial on "Ferroelectric
Materials for Piezoelectric, Pyroelectric, and Memory
Applications"
International
Symposium on Integrated Ferroelectrics, ISIF-2007,
Tutorial on "Domain
Writing"
International Joint Conference on the Application of Ferroelectrics 2002, May
28-June 1,
1.
Individually
addressable epitaxial ferroelectric nanocapacitor
arrays with near Tb inch-2 density. W. Lee, H. Han, A. Lotnyk,
M.A. Schubert, S. Senz, M. Alexe, D. Hesse, S. Baik, and U.
Gösele, Nature Nanotechnology
(2008). 3 p 402-407.
2.
Spatially
resolved mapping of polarization switching behavior in nanoscale
ferroelectrics. Rodriguez, B.J., S.
Jesse, M. Alexe, and S.V. Kalinin, Advanced Materials, 2008. 20(1):
p. 109
3.
Direct
imaging of the spatial and energy distribution of nucleation centres in ferroelectric materials. Jesse, S., B.J. Rodriguez, S. Choudhury,
A.P. Baddorf, I. Vrejoiu,
D. Hesse, M. Alexe, E.A. Eliseev,
A.N. Morozovska, J. Zhang, L.Q. Chen, and S.V.
Kalinin, Nature Materials, 2008. 7(3): p. 209-215.
4.
Atomic-scale study of electric dipoles near charged and uncharged domain
walls in ferroelectric films. Jia, C.L., S.B. Mi, K.
Urban, I. Vrejoiu, M. Alexe, and D.
5.
Coupled ultrafast lattice and polarization dynamics in
ferroelectric nanolayers, Schmising CVK, Bargheer M, Kiel M, et al., Phys. Rev. Lett. 98 (25) 257601 (2007)
6.
Intrinsic
ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on
layer-by-layer grown, defect-free single-crystalline films. Vrejoiu, I., Le Rhun, G., Pintilie, L.,
7.
Metal-ferroelectric-metal
heterostructures with Schottky contacts. I. Influence of the ferroelectric
properties. Pintilie,
L. & Alexe, M. Journal of Applied Physics 98 (2005).
8.
Impact of
misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites. Chu, M. W., Szafraniak, I., Scholz, R., Harnagea, C.,
Hesse, D., Alexe, M. & Gosele, U. Nature Materials 3, 87-90
(2004).
9.
Nanoshell tubes of
ferroelectric lead zirconate titanate and barium
titanate. Luo,
Y., Szafraniak, I., Zakharov,
N. D., Nagarajan, V., Steinhart, M., Wehrspohn, R. B., Wendorff, J.
H., Ramesh, R. & Alexe, M. Applied Physics
Letters 83, 440-442 (2003).
10.
Switching
properties of self-assembled ferroelectric memory cells. Alexe, M., Gruverman, A.,
Harnagea, C., Zakharov, N.
D., Pignolet, A., Hesse, D.
& Scott, J. F. Applied Physics Letters 75, 1158-1160 (1999).
11.
Patterning
and switching of nanosize ferroelectric memory cells. Alexe, M., Harnagea, C., Hesse, D. & Gosele, U. Applied
Physics Letters 75, 1793-1795 (1999). featured by Nature News
12.
Measurement
of interface trap states in metal-ferroelectric-silicon heterostructures. Alexe, M. Applied Physics Letters 72,
2283-2285 (1998).
For newest publications follow this link:
The entire publication list you can find it here
.