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	Marin Alexe Max Planck Institute of Microstructure Physics Weinberg 2 D-06120 Halle/Saale Germany tel: +49-345-5582-705 fax:: +49-345-5511-223 email: malexe@mpi-halle.de	My name in Japanese
Image from Max Planck Research magazine 02/2011

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Profile

I am originally from Bucharest, Romania. As you might suspect, I am a graduate of University of Bucharest and PhD of Institute of Atomic Physics, Bucharest. Since 1996 I am with the Max Planck Institute of Microstructure Physics working on ferroelectrics and direct wafer bonding. For a resume please click here.

Research activities

• Physics and engineering of complex oxide thins films

Thin film growth and characterization: metal oxide ferroelectric thin film deposition, optical and high-frequency applications; pulsed laser deposition, and chemical solution deposition; oxide thin film heterostructures; growth mechanisms and defect structures; structure-property-processing interrelationships; integration of Si and GaAs for device applications.

• Nanoscience & nanotechnology, ferroelectric nanostructures and ultra-thin films.

Nano-fabrication technologies; novel physical phenomena in electronic, and photonic materials with shrinking dimensions. Size effects in nanoscale ferroelectric materials. Physics and micro- and nano-engineering of thin film devices (dielectric or magnetic multi-layers, multi-functional thin film devices, sensors, micro-actuators, non-volatile memories, DRAMs)

• Information Technologies

Non-volatile information storage technologies: ferroelectric random access memories; integrated optical devices for information processing and storage; "smart" thin film for sensors and actuators, and technology development and marketing. Physics and technology of MOS devices including MFS devices and non-volatile memories. Interfaces (oxides-semiconductor) and interface properties

Book on Nanoscale Characterization of Ferroelectric Materials

Downloads:

Tutorial on "Ferroelectric Materials for Piezoelectric, Pyroelectric, and Memory Applications"  International Symposium on Integrated Ferroelectrics, ISIF-2007, Bordeaux, France

Tutorial on "Ferroelectric Materials and Nanoscale Ferroelectrics"  International Symposium on Integrated Ferroelectrics, ISIF-2005, April 17, Shanghai, China.  

Tutorial on "Domain Writing"   International Joint Conference on the Application of Ferroelectrics 2002, May 28-June 1, Nara, Japan.  

Lectures on “Nanoscale Functional Materials”

  International Joint Conference on the Application of Ferroelectrics 2002, May 28-June 1, Nara, Japan.

Selected Publications

1. Reversible electrical switching of spin polarization in multiferroic tunnel junctions, D. Pantel, S. Goetze, D. Hesse and M. Alexe: Nature Materials 11, 289-293 (2012).

2. A photoferroelectric material is more than the sum of its parts, J. Kreisel, M. Alexe and P. A. Thomas: Nature Materials 11, 260 (2012).

3. Tip-enhanced photovoltaic effects in bismuth ferrite. M Alexe, D Hesse: Nature Communications 2 : 256 doi: 10.1038/ncomms261 (2011).

4. Room-Temperature Ferroelectric Resistive Switching in Ultrathin Pb(Zr(0.2)Ti(0.8))O(3) Films. D Pantel, S Goetze, D Hesse, M Alexe: Acs Nano 5 6032-38 (2011).

5. Direct Observation of Continuous Electric Dipole Rotation in Flux-Closure Domains in Ferroelectric Pb(Zr,Ti)O(3). CL Jia, KW Urban, M Alexe, D Hesse, I Vrejoiu: Science 331 1420-23 (2011).

6. Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch^-2 density. W. Lee, H. Han, A. Lotnyk, M.A. Schubert, S. Senz, M. Alexe, D. Hesse, S. Baik, and U. Gösele, Nature Nanotechnology 3, 402-407 (2008)..

7. Spatially resolved mapping of polarization switching behavior in nanoscale ferroelectrics. Rodriguez, B.J., S. Jesse, M. Alexe, and S.V. Kalinin, Advanced Materials 2008. 20(1): p. 109

8. Direct imaging of the spatial and energy distribution of nucleation centres in ferroelectric materials. Jesse, S., B.J. Rodriguez, S. Choudhury, A.P. Baddorf, I. Vrejoiu, D. Hesse, M. Alexe, E.A. Eliseev, A.N. Morozovska, J. Zhang, L.Q. Chen, and S.V. Kalinin, Nature Materials 7, 209-215 (2008).

9. Atomic-scale study of electric dipoles near charged and uncharged domain walls in ferroelectric films. Jia, C.L., S.B. Mi, K. Urban, I. Vrejoiu, M. Alexe, and D. Hesse, Nature Materials 7, 57-61 (2008).

10. Coupled ultrafast lattice and polarization dynamics in ferroelectric nanolayers, Schmising CVK, Bargheer M, Kiel M, et al., Phys. Rev. Lett. 98, 257601 (2007)

11. Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown, defect-free single-crystalline films. Vrejoiu, I., Le Rhun, G., Pintilie, L., Hesse, D., Alexe, M. & Goesele, U. Advanced Materials 18, 1657 (2006).

12. Metal-ferroelectric-metal heterostructures with Schottky contacts. I. Influence of the ferroelectric properties. Pintilie, L. & Alexe, M. Journal of Applied Physics 98 (2005).

13. Impact of misfit dislocations on the polarization instability of epitaxial nanostructured ferroelectric perovskites. Chu, M. W., Szafraniak, I., Scholz, R., Harnagea, C., Hesse, D., Alexe, M. & Gosele, U. Nature Materials 3, 87-90 (2004).

14. Nanoshell tubes of ferroelectric lead zirconate titanate and barium titanate. Luo, Y., Szafraniak, I., Zakharov, N. D., Nagarajan, V., Steinhart, M., Wehrspohn, R. B., Wendorff, J. H., Ramesh, R. & Alexe, M. Applied Physics Letters 83, 440-442 (2003).

15. Switching properties of self-assembled ferroelectric memory cells. Alexe, M., Gruverman, A., Harnagea, C., Zakharov, N. D., Pignolet, A., Hesse, D. & Scott, J. F. Applied Physics Letters 75, 1158-1160 (1999).

16. Patterning and switching of nanosize ferroelectric memory cells. Alexe, M., Harnagea, C., Hesse, D. & Gosele, U. Applied Physics Letters 75, 1793-1795 (1999). featured by Nature News.

17. Measurement of interface trap states in metal-ferroelectric-silicon heterostructures. Alexe, M. Applied Physics Letters 72, 2283-2285 (1998).

For newest publications follow this link:

The entire publication list you can find it here.